Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
- 17 June 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (24) , 4564-4566
- https://doi.org/10.1063/1.1485309
Abstract
Detailed studies on the defect-related surface states of plasma-exposed n-GaN surfaces were carried out. An anomalous flat portion appeared in the metal–insulator–semiconductor capacitance–voltage characteristics for the sample exposed to H2 plasma, corresponding to a localized peak at EC–0.5 eV in the surface state density distribution. Atomic-force microscope and x-ray photoemission studies revealed the formation of Ga droplets on H2-plasma-treated GaN surfaces, caused by the desorption of nitrogen atoms in the form of NHx. These results suggested that a nitrogen-vacancy-related state near the conduction-band edge was introduced on the H2-plasma-treated GaN surface. No such effects took place on the N2-plasma-treated GaN surfacesKeywords
This publication has 14 references indexed in Scilit:
- Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structuresIEEE Transactions on Electron Devices, 2001
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistorsJournal of Applied Physics, 2000
- AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substratesApplied Physics Letters, 2000
- Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor depositionJournal of Applied Physics, 2000
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- Dislocation mediated surface morphology of GaNJournal of Applied Physics, 1999
- Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbideJournal of Applied Physics, 1997
- Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiCApplied Physics Letters, 1997