C-band FET amplifiers

1 January 1970

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XIII, 52-53
https://doi.org/10.1109/isscc.1970.1154852

Abstract

THE BASIC ELEMENTS used in the solid-state microwave amplifier to be described in this paper are Schottky-barrier field-effect transistors" that have exhibited stable power gain to frequencies as high as 12 GHz. The one-micron gate, separated from source and drain by special photolithographic techniques were developed to hold leakage. The high-frequency response obtained with the close tolerances necessary in the critical gate area of distance, attests to the successful development of these technologies, due mainly to the short source-drain transit niques. However, optimization of the device, as regards the interrelationships between physical parameters and electrical characteristics obtained, is still being studied.

Keywords

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