Ge on Si p-i-n photodiodes operating at 10Gbit∕s
- 6 March 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (10)
- https://doi.org/10.1063/1.2182110
Abstract
We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of PhysicsKeywords
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