Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection

1 August 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (8) , 203-205
https://doi.org/10.1109/EDL.1982.25551

Abstract

Novel dual-base, dual-collector, lateral transistors operating in the presence of dc and ac magnetic fields, demonstrate that the differential current at the collector is the result of emitter injection modulation and not carrier deflection. An understanding of basic operating principles has resulted in the design of optimized lateral- and vertical-injecting transitor configurations. The latter exhibit voltage sensitivities exceeding 20 V/T for NPN silicon, at room temperature, and a signal-to-noise ratio of 105for a 1 T magnetic field. A frequency response in excess of 50 MHz should be possible for load resistances less than 1000 ohms.

Keywords

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