A germanium point-contact transistor to operate at high ambient temperatures
- 1 July 1955
- journal article
- Published by IOP Publishing in British Journal of Applied Physics
- Vol. 6 (7) , 251-254
- https://doi.org/10.1088/0508-3443/6/7/307
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Carrier Extraction in GermaniumProceedings of the Physical Society. Section B, 1955
- Carrier Injection and Extraction in Lead SulphideProceedings of the Physical Society. Section B, 1953