Periodic slow-wave low-loss structures for monolithic GaAs microwave integrated circuits

13 September 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (19) , 581-582
https://doi.org/10.1049/el:19790417

Abstract

Slow-wave structures on GaAs semi-insulating substrate, obtained by periodically loading a coplanar line with high-Q overlap capacitors, are described. They operate up to X-band, reducing significantly the signal phase velocity by a factor nearly independent of the frequency. Owing to their low transmission losses, they are particularly suitable for monolithic GaAs f.e.t. circuits.

Keywords

FIELD EFFECT INTEGRATED CIRCUIT
LUMPED CAPACITANCE
TRANSMISSION LOSSES
GAAS SEMI INSULATING SUBSTRATE
SLOW WAVE COPLANAR LINE
X-BAND
SIGNAL PHASE VELOCITY
MIC
FET
MICROWAVE INTEGRATED CIRCUITS

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