Properties of tantalum oxide thin films grown by atomic layer deposition
- 1 May 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 260 (2) , 135-142
- https://doi.org/10.1016/0040-6090(94)06388-5
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- In situ study of a strontium β-diketonate precursor for thin-film growth by atomic layer epitaxyJournal of Materials Chemistry, 1994
- Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integrationJournal of Applied Physics, 1993
- Deposition of tantalum oxide films by ArF excimer laser chemical vapour depositionThin Solid Films, 1993
- Structural and Electrical Properties of Ta2O5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum SourceJapanese Journal of Applied Physics, 1993
- Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor DepositionJournal of the Electrochemical Society, 1992
- Preparation of (111)-Oriented β-Ta2O5 Thin Films by Chemical Vapor Deposition Using Metalorganic PrecursorsJapanese Journal of Applied Physics, 1992
- Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen AnnealingJournal of the Electrochemical Society, 1992
- Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate InsulatorsJapanese Journal of Applied Physics, 1990
- Beiträge zur Chemie der Elemente Niob und Tantal. XXV. Das Gleichgewicht Ta2O5 + 3 TaCl5g = 5 TaOCl3gZeitschrift für anorganische und allgemeine Chemie, 1960
- An X-Ray Investigation of the Tantalum-Oxygen System.Acta Chemica Scandinavica, 1954