Quantum reflections and inelastic scattering of electrons in semiconductor heterostructures

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Abstract
We study the contribution of polar optic phonons to the inelastic scattering rate for the two distinct cases of a nonequilibrium electron initially moving parallel and perpendicular to semiconductor heterojunctions. Quantum mechanical reflections from the abrupt change in potential at the heterointerface are found to change the inelastic scattering rate by spatially separating initial and final electron wave functions. In this paper we explore this effect for typical heterojunction geometries and discuss the influence of the phenomenon on the performance of devices, such as field-effect and unipolar hot-electron transistors.