Elaboration of Bi2Te3 by metal organic chemical vapor deposition
- 1 July 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 303 (1-2) , 1-3
- https://doi.org/10.1016/s0040-6090(97)00089-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Improvement of thermal sensors based on Bi2Te3, Sb2Te3 and Bi0.1Sb1.9Te3Sensors and Actuators A: Physical, 1995
- Optical and electrical characterization of thick GaSb buffer layers grown on 2 in GaAs wafersMaterials Science and Engineering: B, 1994
- Optimal crystal growth conditions of thin films of Bi2Te3 semiconductorsJournal of Crystal Growth, 1994
- Room-Temperature MOCVD of Sb2Te3 Films and Solution Precipitation of M2Te3(M = Sb, Bi) Powders via a Novel N,N-Dimethylaminotrimethylsilane Elimination ReactionChemistry of Materials, 1994
- The composition and conductivity of electrodeposited BiTe alloy filmsThin Solid Films, 1994
- Narrow-bandgap semiconductor-based thermal sensorsSensors and Actuators A: Physical, 1991
- Transport properties of flash-evaporated (Bi1 − xSbx)2Te3 films I: Optimization of film propertiesThin Solid Films, 1990
- Sputtered Bi2Te3 and PbTe thin filmsJournal of Vacuum Science & Technology A, 1983
- Pressure-induced phase transition in Sb2Te3Solid State Communications, 1981
- Crystal growth and orientation in sputtered films of bismuth telluridePhilosophical Magazine, 1964