6-19 GHz GaAs FET Transmit-Receive Switch

1 October 1983

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 106-108
https://doi.org/10.1109/gaas.1983.10399445

Abstract

The distributed FET switch concept is applied to the development of a wideband single-pole double-throw monolithic switch. The switch operates in the 6-19 GHz frequency band with less than 2 dB insertion loss and better than 30 dB isolation across the full band. Switching times as short as 0.2 nsec have been measured.

Keywords

SWITCHING CIRCUITS
SWITCHES
FIELD EFFECT TRANSISTORS
LOGIC GATES
RESISTANCE
GALLIUM ARSENIDE
WIDEBAND

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