A Very Flat Variable Gain Amplifier MMIC for C-Band Satellite Receiver
- 1 September 1989
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1241-1246
- https://doi.org/10.1109/euma.1989.334161
Abstract
This paper describes the design, the realization, and the performance of two versions of an analog C-band GaAs variable gain amplifier module suitable to application in C-band satellite receiver. This modules uses the ability of the Dual-Gate MESFET to provide variable gain. The highest obtained dynamic control range is 30 dB with very flat gain response within 3-5 GHz frequency range. Input and output return losses are always better than 15 dB and the phase variation versus gain lower than 10 degrees over a 20 dB gain/attenuation range. Two wafers of both versions were processed by THOMSON/DAG GaAs foundry using a 0.5 μm gate length technology. The overall manufacturing RF-yields are 45% and 60% for the two versions presented.Keywords
This publication has 2 references indexed in Scilit:
- Microwave Wide-Band Model of GaAs Dual Gate MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1982
- Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed ModulatorsIEEE Transactions on Microwave Theory and Techniques, 1975