Ionized-Impurity Scattering Mobility of Electrons in Silicon
- 15 March 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 129 (6) , 2464-2465
- https://doi.org/10.1103/PhysRev.129.2464
Abstract
A quantitative, partly empirical formula for the ionized-impurity scattering mobility of electrons in silicon, derived earlier by Long and Myers from an analysis of resistivity and Hall effect data, is compared with a theoretical formula of Samoilovich, Korenblit, and Dakhovskii for this mobility, which enables one for the first time to calculate its magnitude from the known conduction band parameters of silicon. Very good quantitative agreement between the two formulas is found.Keywords
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