Molecular beam epitaxial growth of the II-V semiconductor compound Zn3As2

15 December 1986

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 49 (24) , 1665-1667
https://doi.org/10.1063/1.97261

Abstract

We report the first molecular beam epitaxial growth of the II‐V semiconducting compound Zn₃As₂. Commensurate growth of the tetragonal crystal was obtained in the temperature range 300–360 °C on InP. Growth on GaAs was incommensurate due to larger lattice mismatch. The unintentionally doped material is p type. At room temperature, p∼5×10¹⁸ cm⁻³, μ=43 cm²/V s, and the absorption edge is at 0.99 eV. Low‐temperature photoluminescence and Hall data suggest that the lowest acceptor level is very close in energy to the valence‐band maxima. Optical absorption data suggest that the band gap associated with these valence‐band maxima is indirect in nature. The direct band gap is slightly larger.

Keywords

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