Dislocation line kinetics as affected by high-temperature pulse irradiations

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Abstract
Pulse experiments are described in which a pure copper sample was bombarded for 20 sec with 1‐MeV electrons at temperatures between 293 and 430°K, then the continuing increase in accumulation of point defects at dislocations was monitored at temperature by internal friction and elastic modulus data. No discontinuity in the rate of arrival is found at the moment that the irradiation is discontinued, indicating that the arriving point defect must be characterized in its motion by an energy of 0.6 eV. The postirradiation kinetics are analyzed to show that the energy of migration of this defect along dislocations is ∼ 0.2 eV less than the energy for motion in the lattice, away from the dislocations. The above kinetic analyses are carried out with the aid of the recently formulated ``defect dragging'' theory of Simpson and Sosin and constitute further verification of this theory.