Low (2.0 kA/cm 2 ) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substrates
- 4 July 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (14) , 1301-1303
- https://doi.org/10.1049/el:19910814
Abstract
Very low threshold current density operation of 630 nm wavelength range GalnP/AllnP multiquantum well (MQW) lasers grown by gas source molecular beam epitaxy has been achieved. The reduction of threshold current density Jth was obtained by use of 15° off (100) toward [011] GaAs substrates, with a minimum Jth of 2.0 kA/cm2 at 629 nm. The Jth of the lasers grown on the exact oriented (100) substrates was 2.9 kA/cm2 at minimum, which was about 1.4 times larger than the above value.Keywords
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