MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 1109-1112
• https://doi.org/10.4028/www.scientific.net/msf.338-342.1109

Abstract

Keywords

• 15R-SIC
• CHANNEL MOBILITY
• INTERFACE STATES (OR TRAPS)
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
• NEAR-INTERFACE TRAPS
• POLYTYPE
• THRESHOLD VOLTAGE