SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process

This publication has 4 references indexed in Scilit:

• Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter
  IEEE Electron Device Letters, 1989
• Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors
  IEEE Transactions on Electron Devices, 1987
• Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
  Applied Physics Letters, 1986
• Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program
  IBM Journal of Research and Development, 1981