Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates

Abstract
We present a comparative study of copper-hexadecafluorophthalocyanine ( F 16 Cu Pc ) filmsgrown on bare Si O 2 and on Si O 2 functionalized by octadecyltrimethoxisilane (OTMS), a methyl terminated molecular layer with a lower surface energy than Si O 2 . We show that the functionalization of Si O 2 by OTMS leads to the formation of highly structurally ordered F 16 Cu Pc crystallites. The extended lateral order and subsequent reduction of grain boundaries result in an improved field-effect mobility for electrons by almost an order of magnitude in thin-film transistors made of these films.