Narrow Luminescence Linewidth of a Silicon Quantum Dot
- 4 March 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 94 (8) , 087405
- https://doi.org/10.1103/physrevlett.94.087405
Abstract
Single-dot luminescence spectroscopy was used to study the emission linewidth of individual silicon nanocrystals from low temperatures up to room temperature. The results show a continuous line narrowing towards lower temperatures with a linewidth as sharp as 2 meV at 35 K. This value, clearly below the thermal broadening at this temperature, proves the atomiclike emission from silicon quantum dots subject to quantum confinement. The low temperature measurements further reveal a replica, whose origin is discussed. In addition, an TO-phonon replica was detected, which is only present in a fraction of the dots.
Keywords
This publication has 18 references indexed in Scilit:
- Photoluminescence spectroscopy of single silicon quantum dotsApplied Physics Letters, 2002
- Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystalsPhysical Review B, 2001
- Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2Journal of Applied Physics, 1999
- Theory of exciton dephasing in semiconductor quantum dotsPhysical Review B, 1999
- Breakdown of the-Conservation Rule in Si NanocrystalsPhysical Review Letters, 1998
- Hole burning spectroscopy of porous siliconPhysical Review B, 1998
- The structural and luminescence properties of porous siliconJournal of Applied Physics, 1997
- Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum DotsPhysical Review Letters, 1996
- Electron-phonon interactions and excitonic dephasing in semiconductor nanocrystalsPhysical Review Letters, 1993
- Quantum Confinement in Size-Selected, Surface-Oxidized Silicon NanocrystalsScience, 1993