The SiO2/Si Interface Probed With Positrons
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Hydrogen-implantation-induced damage in siliconPhysical Review B, 1987
- Kinetics of high-temperature thermal decomposition of SiO2 on Si(100)Journal of Vacuum Science & Technology A, 1987
- Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)Journal of Applied Physics, 1987
- Variable-energy positron-beam studies of Ni implanted with HePhysical Review B, 1986
- Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)Physical Review B, 1985
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- Observation of defects associated with the Cu/W(110) interface as studied with variable-energy positronsPhysical Review B, 1983
- Slow positrons in metal single crystals. I. Positronium formation at Ag(100), Ag(111), and Cu(111) surfacesPhysical Review B, 1980
- Diffusion of positrons to surfacesApplied Physics A, 1980
- The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbideOxidation of Metals, 1972