AlAs–GaAs superlattices for optimum photoluminescence intensity

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Abstract
Data are presented on a series of consecutively grown superlattices with different layer thicknesses. For each sample, the ratio of the GaAs layer thickness to the AlAs layer thickness was kept constant. In addition, the total thickness of the superlattice was the same for each sample, resulting in a set of samples differing only in the number and separation of AlAs–GaAs interfaces. Photoluminescence from these structures shows an initial intensity drop followed by a substantial intensity increase as the layer thicknesses are decreased. Data are also presented on a series of samples grown consecutively under identical growth conditions, with the exception that the substrate temperature was varied between 580 and 725 °C. Photoluminescence from these superlattices indicates the optimum growth temperature is in the region of 640–670 °C, where the photoluminescence intensity is a factor of 50 greater than for samples grown at lower temperatures. A calibration method, relating indicated growth temperature to actual growth temperature is described.

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