Active mode-locking of 1.3 μm extended-cavity silicon chip Bragg reflector laser

8 December 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (25) , 1563-1565
https://doi.org/10.1049/el:19881066

Abstract

We report active mode-locking of an extended-cavity silicon chip Bragg reflector laser. Pulses of 27 ps duration at repetition rates up to 7 GHz, have been achieved with a controllable narrow optical spectrum.

Keywords

SEMICONDUCTOR LASERS
OPTICAL COMMUNICATION EQUIPMENT
27 PS
EXTENDED-CAVITY
7 GHZ
1.3 MICRON
ACTIVE MODE-LOCKING
HIGH BIT RATE OPTICAL SIGNAL TRANSMISSION
SI CHIP LASER
BRAGG REFLECTOR LASER
CONTROLLABLE NARROW OPTICAL SPECTRUM