LPE growth of 1.3 μm InGaAsP CW lasers on (110) InP substrates

16 April 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (8) , 282-283
https://doi.org/10.1049/el:19810198

Abstract

Room temperature CW operation and threshold current densities below 1000 A/cm² have been achieved near 1.3 μm wavelength with InP/InGaAsP/InP DH lasers grown by liquid phase epitaxy on (110)-oriented InP substrates.

Keywords

INGAASP-INP CW LASERS
III-V SEMICONDUCTORS
LPE