Enhanced magneto-optical effect in a GaAs:MnAs nanoscale hybrid structure combined with GaAs/AlAs distributed Bragg reflectors
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (4) , 2063-2065
- https://doi.org/10.1116/1.1303855
Abstract
We present significant enhancement of magneto-optical effect at room temperature in GaAs with MnAs magnetic nanoclusters sandwiched by GaAs/AlAs multilayers acting as distributed Bragg reflectors. The experimentally observed transmissivity and magneto-optical spectra are well explained by theoretical calculations. This new material system will open up the possibility of realizing nonreciprocal magneto-optical devices integrated with semiconductor optoelectronic devices and circuits.Keywords
This publication has 15 references indexed in Scilit:
- Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructuresJournal of Crystal Growth, 1999
- Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructuresApplied Physics Letters, 1999
- Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopyApplied Physics Letters, 1998
- Epitaxial ferromagnetic thin films and heterostructures of Mn-based metallic and semiconducting compounds on GaAsPhysica E: Low-dimensional Systems and Nanostructures, 1998
- Faraday rotation of ferromagnetic (Ga, Mn)AsElectronics Letters, 1998
- III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlatticesApplied Physics Letters, 1997
- (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxyJournal of Crystal Growth, 1997
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxyApplied Physics Letters, 1996
- Epitaxial ferromagnetic thin films and superlattices of Mn-based metallic compounds on GaAsMaterials Science and Engineering: B, 1995