Quasi-breakdown in ultrathin gate dielectrics
- 9 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 157-160
- https://doi.org/10.1016/s0167-9317(97)00039-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdownApplied Physics Letters, 1987