Junction current and luminescence near a dislocation or a surface

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Abstract
Closed‐form solutions (integral representations) are obtained for the charge density and current density in the vicinity of a dislocation or a surface which pierces a junction at right angles. The total reduction in luminescence and increase in junction current are obtained as functions of two dimensionless ratios, ε, the recombination‐length/diffusion‐length ratio, and η, the radius‐of‐dislocation/diffusion‐length ratio, where recombination length a=D/s is the diffusion constant over surface‐recombination velocity.