Donor-acceptor-type complex in GaAs

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Abstract
A sharp emission line at 1.51165 eV has been observed in the photoluminescent spectra of certain high‐quality GaAs crystals. From the analyses of crystals containing residual strain, it is concluded that the transition results from a bound‐to‐bound transition involving a donor‐acceptor‐type complex. Two such complexes—namely, the double‐acceptor–neutral‐donor complex, in which only the initial J=1/2 state is active, or the double‐donor–neutral‐acceptor complex—can explain the experimental data. From the magnetic field splitting of the line, the effective g values of the hole and electron are determined to be K=2.01±0.11 and ge=−0.35±0.15, respectively.