High Dose Rate Burnout in Silicon Epitaxial Transistors
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (6) , 1411-1415
- https://doi.org/10.1109/TNS.1980.4331042
Abstract
This paper presents experimental results for ionizing radiation-induced burnout in n-p-n transistors. The results indicate a dose-rate and a collector bias threshold for transistor burnout. The collector voltage threshold was shown to be on the order of 2/3 BVCEO and the dose-rate threshold was shown to be on the order of 2 × 1010 rad(Si)/s. The triggering mechanism was postulated to be caused by high current injection which results in avalanche breakdown fields developing across the n-n+ substrate boundary.Keywords
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