Observations of plane-matching grain boundaries by electron channelling patterns
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 47 (1) , 141-146
- https://doi.org/10.1080/01418618308243114
Abstract
Observations of {110} plane-matching grain boundaries have been made by electron channelling patterns (ECPs) for the recrystallization structure of an Fe-3% Si alloy. It has been found that the {110} plane-matching grain boundary plays an important role in the grain growth during recrystallization of the alloy. The grains whose surfaces were near {100} preferentially grew by the migration of a {110} plane-matching grain boundary at the expense of the matrix grain whose surface was near {111} in the direction parallel to {110} plane. The anisotropy of the migration of the {110} plane-matching grain boundaries has been found. A step mechanism is suggested to explain the observed anisotropy of grain boundary migration.Keywords
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