VIB-1 new hot-carrier-induced degradation phenomena in half-micrometer MOS transistors
- 1 November 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (11) , 2384
- https://doi.org/10.1109/T-ED.1987.23316
Abstract
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