A New Type of Stable and Sensitive UV Detector Fabricated with Amorphous Silicon Based Alloys
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusionSolid-State Electronics, 1987
- Design of an ultraviolet radiometer 1: Detector electrical characteristicsApplied Optics, 1986
- Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodesJournal of Applied Physics, 1980
- Silicon p-n junction photodiodes sensitive to ultraviolet radiationIEEE Transactions on Electron Devices, 1979
- Silicon UV-Photodiodes Using Natural Inversion LayersPhysica Scripta, 1978