Abstract
This paper describes the design and fabrication of broad-band millimeter-wave mixers using GaAs beam lead diodes and planar circuit techniques. At Ka band, a conversion loss of less than 9 dB with instantaneous bandwidths of 26 to 40 GHz (RF) and 2 to 16 GHz (IF) has been measured. At W band, the conversion loss was less than 11 dB for an instantaneous RF of 78 to 94 GHz and an IF of 26 to 42 GHz.

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