Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells
- 1 July 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (4) , 947-949
- https://doi.org/10.1116/1.583019
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: