Base diffusion isolated transistors for low power integrated circuits

Abstract
Base diffusion isolated transistors (BDI) designed for low power, nonsaturating, integrated circuits have been fabricated. Buried collectors are unnecessary in these low power devices, resulting in structures equivalent to discrete transistors in complexity of fabrication. A low-current power supply is required for isolation purposes. Transistor characteristics differ negligibly from those of standard transistors at collector currents Tis 80 MHz at 0.1 mA emitter current, 2 V collector voltage.

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