Long-term transient radiation-resistant GaAs FET's
- 1 September 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (9) , 248-250
- https://doi.org/10.1109/EDL.1982.25556
Abstract
The amplitude of long term, pulse-radiation-induced transients in ion implanted GaAs FET's has been reduced by up to two orders of magnitude by the addition of a deep buried p-layer beneath the active n-layer. The p-layer was formed by ion implantation of Be to depth of 0.8 µm below the Si implanted n-active channel. Backgating was also greatly reduced as indicated by a much smaller amplitude transient response following application of a positive gate pulse and by the absence of light sensitivity and looping in the current/ voltage (I-V) characteristics.Keywords
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