Low temperature thermal cleaning of GaSb surfaceandfabrication of near ideal Au-GaSb Schottky diode

6 January 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (1) , 89-90
https://doi.org/10.1049/el:19940044

Abstract

In this experiment, near ideal gold contact GaSb Schottky diodes were made by chemical etching and vacuum evaporation techniques. Good rectification characteristics better than those reported in several previous studies were obtained. The diode manufacturing method that achieved the above results is based on a technique employing low temperature thermal cleaning of the GaSb surface by oxide etch-off, chemical etching and subsequent thermal treatment at 250 °C.

Keywords

RECTIFICATION CHARACTERISTICS
OXIDE ETCH-OFF
CHEMICAL ETCHING
GASB
AU-GASB
GASB SURFACE
RHEED PATTERNS
DIODE MANUFACTURING METHOD
I-V CHARACTERISTICS
NEAR IDEAL CHARACTERISTICS
AU-GASB SCHOTTKY DIODE
LOW TEMPERATURE THERMAL CLEANING
VACUUM EVAPORATION
250 C
XPS SPECTRA
THERMAL TREATMENT

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