Positron mobility in thermally grown SiO2 measured by Doppler broadening technique
- 1 September 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (5) , 2874-2876
- https://doi.org/10.1063/1.349353
Abstract
The positron mobility in thermally grown SiO2 is deduced from Doppler broadening lineshape data on a metal‐oxide‐semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)×10−3 cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.This publication has 11 references indexed in Scilit:
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