Dielectric-constant step of InP/In 1− x Ga x As y P 1− y d.h. lasers
- 23 November 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (24) , 796-797
- https://doi.org/10.1049/el:19780537
Abstract
Measurements are reported of the far-field beam angle perpendicular to the junction for InP/In1−xGaxAsyP1−y double-heterostructure lasers as a function of active-region thickness between 0.15 and 0.9 μm. The lasers operated with wavelengths close to 1.15 μm. Calculations show that good agreement between the theory and the experimental results is obtained using a dielectric-constant step δɛ between the InP and the In1−xGaxAsyP1−y of 0 75.Keywords
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