Optical properties of Ge self-organized quantum dots in Si
- 15 April 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (15) , 8805-8808
- https://doi.org/10.1103/physrevb.57.8805
Abstract
Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short-period superlattices grown on Si(001) at low growth temperature by molecular-beam epitaxy. The photoluminescence (PL) peak position, the strong PL at room temperature, and the high exciton binding energy suggest an indirect-to-direct conversion of the Ge quantum dots. This conversion is in good agreement with the theoretical prediction. The characteristic of absorption directly indicates this conversion. The tunneling of carriers between these quantum dots is also observed.Keywords
This publication has 16 references indexed in Scilit:
- Quantum confinement in semiconductor Ge quantum dotsSolid State Communications, 1997
- Quantum confinement of edge states in Si crystallitesPhysical Review B, 1997
- Relaxation mechanism of Ge islands/Si(001) at low temperatureApplied Physics Letters, 1995
- Room-temperature photoluminescence of GemSinGem structuresApplied Physics Letters, 1995
- Cyclic Growth of Strain-Relaxed IslandsPhysical Review Letters, 1994
- Photoluminescence from short-period strained-layer superlattices of (Si6Ge4)p after hydrogen passivationThin Solid Films, 1992
- Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matricesApplied Physics Letters, 1991
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974