Dependence of minority carrier diffusion length on illumination level and temperature in single crystal and polycrystalline Si solar cells
- 1 November 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (11) , 6949-6953
- https://doi.org/10.1063/1.328650
Abstract
The minority carrier diffusion length L has been measured in the intensity range 0–200 mw cm−2 in the base region of diffused junction n+p single crystal and polycrystalline Si solar cells at various ambient temperatures (77–335 K). It has been found that L increases monotonically with intensity at low temperatures in both types of cells. However, in case of single-crystal cells, it shows a peak at an intensity ∼0.4 sun for temperatures above 200 K and further decreases with the increase of intensity. The results have been interpreted in the light of various recombination mechanisms involved.This publication has 21 references indexed in Scilit:
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