High performance self-aligned sub-100 nm metal–oxide-semiconductor field-effect transistors using x-ray lithography
- 1 November 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (6) , 4051-4054
- https://doi.org/10.1116/1.587428
Abstract
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