Energy Levels of Donor and Acceptor Dopants and Electron and Hole Mobilities in α‐Al2O3
- 1 January 1980
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 63 (1-2) , 31-32
- https://doi.org/10.1111/j.1151-2916.1980.tb10642.x
Abstract
The relation between activation energy of conduction and the position of energy levels of donors and acceptors is discussed. Level positions of donor and acceptor dopants in A12O3 at 1600°C are recalculated from published data. Carrier concentrations calculated from the new level positions lead to carrier mobilities with values scattering around 1 cm2/V·s, leaving the question of which conduction model is preferable unanswered. Relations of acceptor level positions with values of ionization potentials, redox potentials, and charge transfer bands are used to predict level positions for other transition metal acceptors.Keywords
This publication has 4 references indexed in Scilit:
- Generation, transport, and trapping of excess charge carriers in Czochralski-grown sapphirePhysical Review B, 1979
- High‐Temperature Defect Structure of Iron‐Doped α‐AluminaJournal of the American Ceramic Society, 1975
- The Hall effect and magnetoresistance of alumina single crystalsJournal of Physics D: Applied Physics, 1975
- Charge-Transfer Spectra of Transition-Metal Ions in CorundumPhysical Review B, 1970