Asymmetric planar doped barrier diodes for mixer and detector applications

12 October 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (21) , 1454-1456
https://doi.org/10.1049/el:19890971

Abstract

We verify physical arguments which suggest that carefully designed, asymmetric, planar doped barrier diodes are capable of performing at least as well as conventional Schottky diodes in low-frequency mixer and detector applications.

Keywords

ASYMMETRIC DIODES
MODELLING
DC CHARACTERISTICS
N+IP+IN+ STRUCTURE
PLANAR DOPED BARRIER DIODES
9.4 GHZ
ZERO BIAS DETECTION
SHF
LOW-FREQUENCY MIXER
DETECTOR APPLICATIONS
MICROWAVE DEVICES

This publication has 1 reference indexed in Scilit:

Planar doped barrier mixer and detector diodes as alternatives to Schottky diodes for both microwave and millimetre wave applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003