Electrical properties of co-sputtered tantalum silicides
- 1 March 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 125 (3-4) , 329-333
- https://doi.org/10.1016/0040-6090(85)90240-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Resistivities of Thin Film Transition Metal SilicidesJournal of the Electrochemical Society, 1982
- Refractory metal silicides for VLSI applicationsJournal of Vacuum Science and Technology, 1981
- Refractory silicides of titanium and tantalum for low-resistivity gates and interconnectsIEEE Transactions on Electron Devices, 1980
- Silicide formation in thin cosputtered (tantalum + silicon) films on polycrystalline silicon and SiO2Journal of Applied Physics, 1980