Trapping parameters of dangling bonds in hydrogenated amorphous silicon
- 1 December 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11) , 1060-1062
- https://doi.org/10.1063/1.93400
Abstract
The mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in a-Si:H are measured using time-of-flight transient photoconductivity. The magnitude obtained for the product μτNs is 3.5×108±25% cm−1 V−1 and 4×107±50% cm−1 V−1 for electrons and holes, respectively. The capture cross section is 4×10−15 cm2 for electrons and about 2×10−15 cm2 for holes. The results are consistent with the amphoteric nature of neutral dangling bonds.Keywords
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