INSTABILITIES IN SEMICONDUCTING GLASS DIODES
- 1 March 1970
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (5) , 212-214
- https://doi.org/10.1063/1.1653165
Abstract
A predominantly amorphous mixture of Te, As, and Ge exhibits electrical memory effects, but continued cycling of the memory leads to unstable behavior. An explanation is based on the presence of varying amounts of crystalline material, and a quantitative relationship is presented.Keywords
This publication has 6 references indexed in Scilit:
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- Electrical Pulse Breakdown of Silicon Oxide FilmsJournal of Applied Physics, 1969
- FILAMENTARY CONDUCTION IN SEMICONDUCTING GLASS DIODESApplied Physics Letters, 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Electrical Conduction Anomaly of Semiconducting Glasses in the System As—Te—IJournal of the American Ceramic Society, 1964
- The Electrical Conductivity of MolybdenitePhysical Review B, 1923