Diffusion of atomic silicon in gallium arsenide
- 25 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (4) , 293-295
- https://doi.org/10.1063/1.99917
Abstract
Silicon impurities with an initial Dirac-delta-function-like distribution profile are diffused into GaAs using rapid thermal annealing. The diffusion of atomic Si is determined by a novel method of comparing experimental capacitance-voltage profiles with a corresponding self-consistent profile calculation. Capacitance-voltage profiles broaden from 30 to 137 Å upon rapid thermal annealing at 1000 °C for 5 s. The diffusion coefficient and the activation energy of atomic Si diffusion in GaAs are determined to be D0=4×10−4 cm2/s and Ea=2.45 eV, respectively. The diffusion coefficient is two orders of magnitude smaller as compared to Si-pair diffusion in GaAs.Keywords
This publication has 6 references indexed in Scilit:
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Efficient Si Planar Doping in GaAs by Flow-Rate Modulation EpitaxyJapanese Journal of Applied Physics, 1986
- Closed-tube diffusion of silicon in GaAs from sputtered silicon filmElectronics Letters, 1986
- Diffusion and electrical properties of silicon-doped gallium arsenideJournal of Applied Physics, 1985
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982