Experimental results of GaInP/sub 2//GaAs/Ge triple junction cell development for space power systems
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 183-186
- https://doi.org/10.1109/pvsc.1996.563977
Abstract
This paper describes the successful demonstration of high efficiency, large area monolithic triple-junction, n-on-p, GaInP/sub 2//GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm/spl times/2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3" diameter wafer is also achieved. The average efficiency of 164, 2 cm/spl times/2 cm triple junction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.Keywords
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