Spatially distributed p-n heterojunction based on nanoporous TiO2 and CuSCN

Abstract
Directed semiconductor growth in nanoporous ceramic films is reported. A p-n heterojunction with an interface that is spatially distributed across the complete thickness of the ceramic film is established. The interface area is estimated to be several 100 times larger than its geometric projection. The p-n junction shows excellent rectification and may serve as the basic building block for photovoltaic devices.