Raman amplification in GaP-AlxGa1-xP waveguides for light frequency discrimination
- 1 April 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Optoelectronics
- Vol. 145 (2) , 105-108
- https://doi.org/10.1049/ip-opt:19981555
Abstract
Raman amplification characteristics of the GaP-AlxGa1-xP heterostructure waveguide have been measured by fine tuning the pump light frequency. The Raman gain and the Raman gain bandwidth are 0.03 × 10-6 W-1 cm-1 and 23.5 GHz, respectively. The amplified signal light can be detected even at the pump light power level of 10 mW. This result shows that the semiconductor Raman amplifier is suitable for demodulators based on light frequency discrimination in wideband optical communication systems.Keywords
This publication has 7 references indexed in Scilit:
- Fabrication and characteristics of tapered waveguide semiconductor Raman lasersIEE Proceedings - Optoelectronics, 1996
- Semiconductor Raman laser with resonator film transparent to pump lightIEE Proceedings J Optoelectronics, 1991
- Semiconductor Raman laserJournal of Applied Physics, 1980
- Raman Oscillation in Glass Optical WaveguideApplied Physics Letters, 1972
- Tunable Coherent Radiation Source in the 5-μ RegionApplied Physics Letters, 1971
- Tunable Stimulated Raman Scattering from Conduction Electrons in InSbPhysical Review Letters, 1970
- EFFICIENT, TUNABLE OPTICAL EMISSION FROM LiNbO3 WITHOUT A RESONATORApplied Physics Letters, 1969